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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2250-2256

Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices

(2) Farrell, H H a LaViolette, Randall A a

a IDAHO NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RELAXATION; BAND GAP; INTERFACE ENERGY; INTERFACE STRUCTURES;

BINDING ENERGY; CHEMICAL BONDS; CRYSTAL STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PROBABILITY DENSITY FUNCTION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

ZINC COMPOUNDS;

EID: 4944255870 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1773842 Document Type: Conference Paper

Times cited : (6)

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