Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients

Applied Surface Science

Volumn 151, Issue 3, 1999, Pages 271-279

  Constantino, M E ^a   Navarro Contreras, H ^a   Vidal, M A ^a   Salazar Hernandez B ^a   Lastras Martinez A ^a   Hernandez Calderon I ^b   Lopez Lopez M ^b  

^a UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PITTING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; STRAIN; STRESS ANALYSIS; THERMAL EXPANSION;

INTERFACIAL STRESS; REFLECTANCE-DIFFERENCE SPECTROSCOPY; THERMAL EXPANSION COEFFICIENTS; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0033339938     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00289-5     Document Type: Article

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