Growth of ZnSe layers on β(2×4)As, (i×3)Te, and (4×2)Ga-terminated (0 0 1)GaAs substrates

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 502-505

  Carbonell, L ^a   Etgens, V H ^a   Koebel A ^a   Eddrief, M ^a   Capelle, B ^a  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); NUCLEATION; PRECIPITATION (CHEMICAL); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; STOICHIOMETRY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CRITICAL THICKNESS;

MOLECULAR BEAM EPITAXY;

EID: 0032650546     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01386-4     Document Type: Article

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