Influence of nitrogen bonds on electrical properties of HfAlO x(N) films fabricated through LL-D&A process using NH3

Materials Research Society Symposium - Proceedings

Volumn 786, Issue , 2003, Pages 63-68

  Iwamaoto, Kunihiko ^a   Nishimura, Tomoaki ^a   Tominaga, Koji ^a   Yasuda, Tetsuji ^a   Kimoto, Koji ^b   Nabatame, Toshihide ^a   Toriumi, Akira ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; BONDING; CHEMICAL BONDS; DEPOSITION; DIFFUSION; FILM GROWTH; NITROGEN; PERMITTIVITY; THERMAL EFFECTS; THIN FILMS;

ATOMIC LAYER DEPOSITION (ALD); GATE INSULATORS; POST DEPOSITION ANNEALING (PDA); RAPID THERMAL ANNEALING (RTA);

HAFNIUM COMPOUNDS;

EID: 2442420098     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-786-e1.6     Document Type: Conference Paper

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8. K. Tominaga et al., Extended Abstract SSDM p.48 (2003).
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