Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Giddings, A D ^a   Makarovsky, O N ^a   Khalid, M N ^b   Yasin, S ^c   Edmonds, K W ^a   Campion, R P ^a   Wunderlich, J ^b,d   Jungwirth, T ^a,d   Williams, D A ^b   Gallagher, B L ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC MEASURING INSTRUMENTS; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONICS INDUSTRY; EPITAXIAL GROWTH; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; MICROELECTRONICS; OPTICAL DESIGN; PARTICLE BEAMS; SEMICONDUCTOR DEVICES; WATER METERS;

(GA ,MN)AS; ANISOTROPIC MAGNETO-RESISTANCE; BULK MATERIALS; EPI LAYERS; FERROMAGNETIC SEMICONDUCTORS; HIGH-RESOLUTION ELECTRON BEAM LITHOGRAPHY; MAGNETO-TRANSPORT; MULTI-STABLE; NANO-SCALE DEVICES; NANOCONSTRICTION; NANOCONSTRICTIONS;

ARSENIC;

EID: 49349110238     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/8/085004     Document Type: Article

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