Very large magnetoresistance in lateral ferromagnetic (ga, mn)as wires with nanoconstrictions

Physical Review Letters

Volumn 91, Issue 21, 2003, Pages

  Ruster C ^a   Borzenko, T ^a   Gould, C ^a   Schmidt, G ^a   Molenkamp, L W ^a   Liu, X ^b   Wojtowicz, T J ^b   Furdyna, J K ^b   Yu, Z G ^c   Flatte M E ^c  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c UNIVERSITY OF IOWA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; FERROMAGNETIC MATERIALS; GALLIUM; MAGNETIC ANISOTROPY; MAGNETIC DOMAINS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY;

DOMAIN WALL TRAPPING; NANOCONSTRICTIONS; SHAPE ANISOTROPY; TUNNEL BARRIER; VERY LARGE MAGNETORESISTANCE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0345790145     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.216602     Document Type: Article

References (21)

1. N. Akiba, D. Chiba, K. Nakata, F. Matsukura, and H. Ohno, J. Appl. Phys. 87, 6436 (2000).10.1063/1.372730
2. M. Tanaka and Y. Higo, Phys. Rev. Lett. 87, 026602 (2001); 10.1103/PhysRevLett.87.026602
3. S.H. Chun, S.J. Potashnik, K.C. Ku, P. Schiffer, and N. Samarth, Phys. Rev. B 66, R100408 (2002); 10.1103/PhysRevB.66.100408
4. R. Mattana, J.-M. George, H. Jaffrès, F. Nguyen Van Dau, A. Fert, B. Lépine, A. Guivarc’h, and G. Jézéquel, Phys. Rev. Lett. 90, 166601 (2003).10.1103/PhysRevLett.90.166601
5. M.E. Flatté and G. Vignale, Appl. Phys. Lett. 78, 1273 (2001); 10.1063/1.1348317
6. G. Vignale and M.E. Flatté, Phys. Rev. Lett. 89, 098302 (2002).10.1103/PhysRevLett.89.098302
7. For a review, see A.D. Kent, J. Yu, U. Rüdiger, and S.S.P. Parkin, J. Phys. Condens. Matter 13, R461 (2001).10.1088/0953-8984/13/25/202
8. N. García, M. Muñoz, and Y.-W. Zhao, Phys. Rev. Lett. 82, 2923 (1999).10.1103/PhysRevLett.82.2923
9. J.-E. Wegrowe, T. Wade, X. Hoffer, L. Gravier, J.-M. Bonard, and J.-Ph. Ansermet, Phys. Rev. B 67, 104418 (2003);10.1103/PhysRevB.67.104418
10. S.Z. Hua and H.D. Chopra, Phys. Rev. B 67, 060401 (2003).10.1103/PhysRevB.67.060401
11. P. Bruno, Phys. Rev. Lett. 83, 2425 (1999).10.1103/PhysRevLett.83.2425
12. H.X. Tang, R.K. Kawakami, D.D. Awschalom, and M.L. Roukes, Phys. Rev. Lett. 90, 107201 (2003).10.1103/PhysRevLett.90.107201
13. The switching of the outer wires is mainly initiated by DW nucleated in the leads. See K. Shigeto, T. Shinjo, and T. Ono, Appl. Phys. Lett. 75, 2815 (1999).10.1063/1.125159
14. W.F. Brinkman, R.C. Dynes, and J.M. Rowell, J. Appl. Phys. 41, 1915 (1970).
15. T. Valet and A. Fert, Phys. Rev. B 48, 7099 (1993).10.1103/PhysRevB.48.7099
16. Equation 2 assumes ballistic transport across the DW; in the diffusive regime one has (Formula presented).
17. J. Szczytko, W. Mac, A. Twardowski, F. Matsukura, and H. Ohno, Phys. Rev. B 59, 12?935 (1999).10.1103/PhysRevB.59.12935
18. M. Julliere, Phys. Lett. A 54, 225 (1975).10.1016/0375-9601(75)90174-7
19. S.M. Sze, Physics of Semiconductor Devices (2nd Ed.) (Wiley, New York, 1981), p.�522.
20. Z.G. Yu and M.E. Flatté, Phys. Rev. B 66, 201202(R) (2002); 10.1103/PhysRevB.66.201202
21. Z.G. YuM.E. FlattéPhys. Rev. B66, 235302 (2002).