Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

Applied Physics Letters

Volumn 82, Issue 14, 2003, Pages 2287-2289

  Sorensen B S ^a   Lindelof, P E ^a   Sadowski, J ^a,b,c   Mathieu, R ^d,e   Svedlindh, P ^d  

^a UNIVERSITY OF COPENHAGEN   (Denmark)

^b LUND UNIVERSITY   (Sweden)

^c INSTITUTE OF PHYSICS   (Poland)

^d UPPSALA UNIVERSITY   (Sweden)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; THERMAL EFFECTS;

CURIE TEMPERATURE;

THIN FILMS;

EID: 0345373811     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566097     Document Type: Article

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