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Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

First-principles study on inversion layer properties of double-gate atomically thin silicon channels

(2) Kageshima, Hiroyuki a Fujiwara, Akira a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; NONMETALS; SILICON; SOLID STATE PHYSICS;

ATOMIC-SCALE THICKNESS; DEVICE PHYSICS; DOUBLE GATES; ENFORCED FERMI-ENERGY DIFFERENCE METHOD; FIRST PRINCIPLES STUDIES; FIRST-PRINCIPLES; FIRST-PRINCIPLES APPROACHES; INVERSION LAYERS; NANO-METER SCALE; SILICON CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 49149125476 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2964194 Document Type: Article

Times cited : (5)

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