-
1
-
-
46049107875
-
New paradigms in the silicon industry
-
Ch.-G. Hwang, New paradigms in the silicon industry, IEDM. Tech. Dig. (2006), pp. 19-24.
-
(2006)
IEDM. Tech. Dig
, pp. 19-24
-
-
Hwang, C.-G.1
-
2
-
-
46049090421
-
Full integration of highly manufacturable 512Mb PRAM based on 90 nm technology
-
J.-H. Oh, J.-H. Park, Y.S. Lim et al., Full integration of highly manufacturable 512Mb PRAM based on 90 nm technology, IEDM. Tech. Dig. (2006), pp. 49-52.
-
(2006)
IEDM. Tech. Dig
, pp. 49-52
-
-
Oh, J.-H.1
Park, J.-H.2
Lim, Y.S.3
-
3
-
-
29144500097
-
Glassy metals
-
H.S. Chen, Glassy metals, Rep. Prog. Phys. 43 (1980), pp. 353-432.
-
(1980)
Rep. Prog. Phys
, vol.43
, pp. 353-432
-
-
Chen, H.S.1
-
5
-
-
33847607700
-
Intrinsic data retention in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time
-
A. Redaelli, D. Ielmini, U. Russo et al., Intrinsic data retention in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time, IEEE Trans. Electronic Devices 53 (2006), pp. 3040-3046.
-
(2006)
IEEE Trans. Electronic Devices
, vol.53
, pp. 3040-3046
-
-
Redaelli, A.1
Ielmini, D.2
Russo, U.3
-
6
-
-
0035886318
-
Crystallization kinetics of sputter-deposited amorphous AgInSbTe films
-
W. Njoroge and M. Wuttig, Crystallization kinetics of sputter-deposited amorphous AgInSbTe films, J. Appl. Phys. 90 (2001), pp. 3816-3821.
-
(2001)
J. Appl. Phys
, vol.90
, pp. 3816-3821
-
-
Njoroge, W.1
Wuttig, M.2
-
8
-
-
0019026872
-
Threshold switching in cahlcogenide-glass thin films
-
D. Adler, M.S. Shur, M. Silver et al., Threshold switching in cahlcogenide-glass thin films, J. Appl. Phys. 51 (1980), pp. 3289-3309.
-
(1980)
J. Appl. Phys
, vol.51
, pp. 3289-3309
-
-
Adler, D.1
Shur, M.S.2
Silver, M.3
-
9
-
-
0035717521
-
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
-
S. Lai and T. Lowrey, OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications, IEDM Tech. Dig. (2001), pp. 803-806.
-
(2001)
IEDM Tech. Dig
, pp. 803-806
-
-
Lai, S.1
Lowrey, T.2
-
10
-
-
16244410161
-
Low-cost and nanoscale non-volatile memory concept for future silicon chips
-
M.H.R. Lankhorst, B.W.S.M.M. Ketelaars, R.A.M. Wolters et al., Low-cost and nanoscale non-volatile memory concept for future silicon chips, Nature Materials 4, (2005), pp. 347-352.
-
(2005)
Nature Materials
, vol.4
, pp. 347-352
-
-
Lankhorst, M.H.R.1
Ketelaars, B.W.S.M.M.2
Wolters, R.A.M.3
-
11
-
-
0141814956
-
Rate of nucleation in condensed systems
-
D. Turnbull and J.C. Fisher, Rate of nucleation in condensed systems, J. Chem. Phys. 17 (1949), pp. 71-73.
-
(1949)
J. Chem. Phys
, vol.17
, pp. 71-73
-
-
Turnbull, D.1
Fisher, J.C.2
-
12
-
-
84934935637
-
Kinetische behandlung der keimbildung in übersättigten dämpfern
-
R. Becker and W. Döring, Kinetische behandlung der keimbildung in übersättigten dämpfern, Ann. Phys. 24 (1935), pp. 719-752.
-
(1935)
Ann. Phys
, vol.24
, pp. 719-752
-
-
Becker, R.1
Döring, W.2
-
13
-
-
8344274270
-
Crystal nucleation in liquids and glasses
-
K.F. Kelton, Crystal nucleation in liquids and glasses, Solid State Phys. 45 (1991), pp. 75-177.
-
(1991)
Solid State Phys
, vol.45
, pp. 75-177
-
-
Kelton, K.F.1
-
14
-
-
25144444951
-
Kinetics of crystal in undercooled droplets of Sb- and Te-based alloys used for phase change recording
-
J. Kalb, F. Spaepen, and M. Wuttig, Kinetics of crystal in undercooled droplets of Sb- and Te-based alloys used for phase change recording, J. Appl. Phys. 98 (2005), 054910.
-
(2005)
J. Appl. Phys
, vol.98
, pp. 054910
-
-
Kalb, J.1
Spaepen, F.2
Wuttig, M.3
-
15
-
-
0037351476
-
Calorimetric measurements of phase transformations in thin films of amorphous Te alloys used for optical data storage
-
_, Calorimetric measurements of phase transformations in thin films of amorphous Te alloys used for optical data storage, J. Appl. Phys. 93 (2003), pp. 2389-2393.
-
(2003)
J. Appl. Phys
, vol.93
, pp. 2389-2393
-
-
Kalb, J.1
Spaepen, F.2
Wuttig, M.3
-
16
-
-
0742284414
-
5 in optical and electrical memory devices
-
5 in optical and electrical memory devices, J. Appl. Phys. 95 (2004), pp. 504-511.
-
(2004)
J. Appl. Phys
, vol.95
, pp. 504-511
-
-
Senkader, S.1
Wright, C.D.2
-
17
-
-
21244445766
-
-
available at, Accessed 20 March 2008
-
T. Lowrey, Ovonic unified memory, available at http://www.ovonyx.com/technology/technology.pdf (Accessed 20 March 2008).
-
Ovonic unified memory
-
-
Lowrey, T.1
-
18
-
-
0027701030
-
Completely erasable phase change optical disc II: Application of Ag-In-Sb-Te mixed-phase system for rewritable compact disc compatible with CD-velocity and double CD-velocity
-
H. Iwasaki, M. Harigaya, O. Nonoyama et al., Completely erasable phase change optical disc II: Application of Ag-In-Sb-Te mixed-phase system for rewritable compact disc compatible with CD-velocity and double CD-velocity, Jpn. J. Appl. Phys. 32 (1993), pp. 5241-5247.
-
(1993)
Jpn. J. Appl. Phys
, vol.32
, pp. 5241-5247
-
-
Iwasaki, H.1
Harigaya, M.2
Nonoyama, O.3
-
19
-
-
33751023108
-
Impact of material crystallization characteristics on the switching behavior of the phase change memory cell
-
T. Gille, L. Goux, J. Lisoni et al., Impact of material crystallization characteristics on the switching behavior of the phase change memory cell, Mater. Res. Soc. Symp. Proc. 918E (2006), pp. 53-58.
-
(2006)
Mater. Res. Soc. Symp. Proc
, vol.918 E
, pp. 53-58
-
-
Gille, T.1
Goux, L.2
Lisoni, J.3
-
20
-
-
0031268714
-
Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media
-
C. Peng, L. Cheng, and M. Mansuripur, Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media, J. Appl. Phys. 82 (1997), pp. 4183-4191.
-
(1997)
J. Appl. Phys
, vol.82
, pp. 4183-4191
-
-
Peng, C.1
Cheng, L.2
Mansuripur, M.3
-
22
-
-
21644477080
-
Electrothermal and phase-change dynamics in chalcogenide-based memories
-
A.L. Lacaita, A. Redaelli, D. Ielmini et al., Electrothermal and phase-change dynamics in chalcogenide-based memories, IEDM. Tech. Dig. (2004), pp. 911-914.
-
(2004)
IEDM. Tech. Dig
, pp. 911-914
-
-
Lacaita, A.L.1
Redaelli, A.2
Ielmini, D.3
-
23
-
-
0037098062
-
Numerical simulation of mark formation in dual-stack phase-change recording
-
E.R. Meinders, H.J. Borg, M.H.R. Lankhorst et al., Numerical simulation of mark formation in dual-stack phase-change recording, J. Appl. Phys. 91 (2002), pp. 9794-9802.
-
(2002)
J. Appl. Phys
, vol.91
, pp. 9794-9802
-
-
Meinders, E.R.1
Borg, H.J.2
Lankhorst, M.H.R.3
-
24
-
-
21244498532
-
Programming characteristics of phase change random access memory using phase change simulations
-
Y.-T. Kim, Y.-N. Hwang, K.-H. Lee et al., Programming characteristics of phase change random access memory using phase change simulations, Jpn. J. Appl. Phys. 44 (2005), pp. 2701-2705.
-
(2005)
Jpn. J. Appl. Phys
, vol.44
, pp. 2701-2705
-
-
Kim, Y.-T.1
Hwang, Y.-N.2
Lee, K.-H.3
-
25
-
-
36348965409
-
Modeling of the mechanical behavior during programming of a non-volatile phase-change memory cell using a coupled electrical-thermal-mechanical finite-element simulator
-
T. Gille, J. Lisoni, L. Goux et al., Modeling of the mechanical behavior during programming of a non-volatile phase-change memory cell using a coupled electrical-thermal-mechanical finite-element simulator, Proceedings EuroSimE (2007), pp. 283-288.
-
(2007)
Proceedings EuroSimE
, pp. 283-288
-
-
Gille, T.1
Lisoni, J.2
Goux, L.3
-
27
-
-
5444235653
-
Understanding the phase-change mechanism of rewritable optical media
-
A. Kolobov, P. Frenkel, A.I. Fons et al., Understanding the phase-change mechanism of rewritable optical media, Nature Mater 3 (2004), pp. 703-707.
-
(2004)
Nature Mater
, vol.3
, pp. 703-707
-
-
Kolobov, A.1
Frenkel, P.2
Fons, A.I.3
-
29
-
-
33947243961
-
Intrinsic data retention in nanoscale phase-change memories - part I: Monte Carlo model for crystallization and percolation
-
U. Russo, D. Ielmini, A. Redaelli et al., Intrinsic data retention in nanoscale phase-change memories - part I: Monte Carlo model for crystallization and percolation, IEEE Trans. Electronic Devices 53 (2006), pp. 3032-3038.
-
(2006)
IEEE Trans. Electronic Devices
, vol.53
, pp. 3032-3038
-
-
Russo, U.1
Ielmini, D.2
Redaelli, A.3
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