Band offset determination of the GaAs/GaAsN interface using the density functional theory method

Journal of Physics Condensed Matter

Volumn 20, Issue 31, 2008, Pages

  Komsa, H P ^a   Arola, E ^a   Larkins, E ^b   Rantala, T T ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); NITROGEN; NONMETALS; PROBABILITY DENSITY FUNCTION;

ANISOTROPIC STRAINS; BAND OFFSETS; BAND STRUCTURES; CORE REGIONS; DENSITY FUNCTIONAL THEORY METHODS; EFFECT OF STRAIN; ELECTROSTATIC POTENTIAL; FIRST PRINCIPLES; INTERFACE POTENTIALS; NITROGEN CONCENTRATIONS; PRESENT METHOD; SUPER LATTICES; TYPE II; VALENCE-BAND OFFSETS;

DENSITY FUNCTIONAL THEORY;

EID: 49149091734     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/31/315004     Document Type: Article

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