Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2536-2538

  Gao, Q ^a   Tan, H H ^a   Jagadish, C ^a   Sun, B Q ^b   Gal, M ^b   Ouyang, L ^c,e   Zou, J ^d  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF SYDNEY   (Australia)

^d UNIVERSITY OF QUEENSLAND   (Australia)

^e SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC INSULATING MATERIALS; LASER BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; MONOLAYERS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); ROOM TEMPERATURE (RT); STRAIN COMPENSATING LAYERS (SCL); TENSILE STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2342468004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1697628     Document Type: Article

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