Light emission and detection by metal oxide silicon tunneling diodes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 749-752

  Liu, C W ^a   Lee, M H ^a   Lin, C F ^a   Lin, I C ^a   Liu, W T ^a   Lin, H H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTROLUMINESCENCE; ELECTRONS; EMISSION SPECTROSCOPY; GATES (TRANSISTOR); LIGHT EMISSION; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; MOS DEVICES; OXIDES; PHOTODETECTORS; PLASMAS;

DARK CURRENT; ELECTRON HOLE PLASMA MODEL; INVERSION LAYER; METAL OXIDE SILICON TUNNELING DIODES; SURFACE BAND BENDING; TUNNELING GATE; ULTRATHIN GATE OXIDE;

TUNNEL DIODES;

EID: 0033315078     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)