Comparative study of vertical gradient freeze grown CdTe with variable Sn concentration

Journal of Materials Research

Volumn 21, Issue 4, 2006, Pages 1025-1032

  Franc, J ^a   Elhadidy, H ^a   Babentsov, V ^b   Fauler, A ^c   Fiederle, M ^c  

^a CHARLES UNIVERSITY   (Czech Republic)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c Materialforschungszentrum   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; ELECTRIC CONDUCTIVITY; GLOW DISCHARGES; IMPURITIES; MASS SPECTROMETRY; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; TIN;

GLOW DISCHARGE MASS SPECTROSCOPY; PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY; TIN CONCENTRATION; TIN IMPURITY; VERTICAL GRADIENT FREEZE METHOD;

INGOTS;

EID: 33744488769     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0117     Document Type: Article

References (48)

1. O. Limousin: New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications. Nucl. Instrum. Methods A 504, 24 (2003).
2. T.E. Schlesinger: J.E. Toney, H. Yoon, E.Y. Lee, B.A. Brunett, L. Franks, R.B. James: Cadmium zinc telluride and its use as a nuclear radiation detector material, Mater. Sci. Eng. R32, 103 (2001).
3. P. Rudolph and M. Mühlberg: Basic problems of vertical Bridgman growth of CdTe. Mater. Sci. Eng. B16, 8 (1993).
4. F.A. Kröger: The defect structure of CdTe. Rev. Phys. Applique 12, 205 (1977).
5. K. Mochizuki: Growth of CdTe from Te excess solution and self-compensation of doped donor. J. Cryst. Growth 214/215, 9 (2000).
6. De Nobel: Phase equilibria and semiconducting properties of cadmium telluride. Philips Res. Rep. 14, 361 (1959).
7. O.A. Matveev and A.I. Terentev: Basic principles of postgrowth annealing of CdTe: Cl ingot to obtain semi-insulating crystals. Semiconductors 34, 1316 (2000).
8. M. Fiederle, C. Eiche, M. Salk, R. Schwarz, K.W. Benz, W. Stadler, D.M. Hofman, and B.K. Meyer: Modified compensation model of CdTe. J. Appl. Phys. 84, 6689 (1998).
9. G. Brunthaler, W. Jantsch, U. Kaufmann, and J. Schneider: Electron-spin-resonance analysis of the deep donors lead, tin, and germanium in CdTe. Phys. Rev. B 31, 1239 (1985).
10. W. Jantsch and G. Hendorfer: Characterization of deep levels in CdTe by photo-EPR and related techniques. J. Cryst. Growth 101, 404 (1990).
11. A.V. Savitskii, K.D. Tovstyuk, and O.E. Panchuk: Impurity interaction in CdTe dynamic lattice. Sov. Phys. Solid State 27, 1956 (1985).
12. P.M. Fochuk, L.P. Shcherbak, P.I. Feichuk, and O.E. Panchuk: Distribution of Ga in CdTe. Inorg. Mater. 31, 1408 (1995).
13. M. Illgner and H. Overhof: Electronic structure and hyperfine interactions for deep donors and vacancies in II-VI compound semiconductors. Phys. Rev. B 54, 2505 (1996).
14. A.V. Savitskii, O.A. Parfenyuk, M.I. Ilaschukm, and P.A. Pavlin: Compensating effect of lead impurity of CdTe. Inorg. Mater. 25, 1567 (1989).
15. P.N. Gorlei, O.A. Parfenyuk, M.I. Ilaschuk, K.S. Ulyanitskii, V.R. Burachek, and S.N. Chupyra: Photosensitive centers in CdTe < Ge >, CdTe < Sn >, and CdTe < Pb >. Inorg. Mater. 39, 1127 (2003).
16. V. Savitskii, O.A. Parfenyuk, M.I. Ilashchuk, K.S. Ulyanitskii, A.I. Savchuk, and P.M. Gorley: Photoelectric properties of CdTe: Sn semiinsulating crystals. Opt. Mater. 18, 167 (2001).
17. O. Panchuk, A. Savitskiy, P. Fochuk, Y. Nykonyuk, O. Parfenyuk, L. Shcherbak, M. Lashchuk, L. Latsunyuk, and P. Feychuk: IV group dopant compensation effect in CdTe. J. Cryst. Growth 197, 607 (1999).
18. M. Fiederle, V. Babentsov, J. Franc, A. Fauler, K.W. Benz, R.B. James, and E. Cross: Defect structure of Ge doped CdTe. J. Cryst. Growth 243, 77 (2002).
19. R. Stibal, J. Windscheif, and W. Jantz: Contactless evaluation of semiinsulating GaAs wafer resistivity using time-dependent charge measurements. Semicond. Sci. Technol. 6, 995 (1991).
20. M. Tapiero, N. Benjelloun, J.P. Zielinger, and S. El Hamd: Noguet, Photoinduced current transient spectroscopy in high-resistivity bulk materials - instrumentation and methodology. J. Appl. Phys. 64, 4006 (1988).
21. 1-x Te in rock-salt structure - a study of zero flux surfaces and bonding. J. Chem. Phys. 101, 6782 (1994).
22. 1-x Te. J. Chem. Phys. 99, 6751 (1993).
23. G.W. Blackmore, S.J. Courtney, A. Royle, N. Shaw, and A.W. Vere: Boron segregation in Czochralski grown CdTe. J. Cryst. Growth 85, 335 (1987).
24. E. Oldekop, V. Eyert, F. Niedermeyer, M. Wienecke, and W.D. Zeitz: The behavior of B-12 in CdTe studied with beta-NMR technique. Materials Science Application of Ion Beam Techniques Materials Science Forum 248, 267 (1997).
25. U. Pal, P. Fernandez, J. Piqueras, N.V. Sochinskii, and E. Dieguez: Cathodoluminescence characterization of Ge-doped CdTe crystals. J. Appl. Phys. 78, 1992 (1995).
26. A. Castaldini, A. Cavallini, B. Fraboni, P. Fernandez, and J. Piqueras: Deep energy levels in CdTe and CdZnTe. J. Appl. Phys. 83, 2121 (1998).
27. xTe. Phys. Rev. B 51, 10619 (1995).
28. Zhonghai Yu, S.G. Hofer, N.C. Giles, and T.H. Myers, C.J. Summers: Interpretation of near-band-edge photoreflectance spectra from CdTe. Phys. Rev. B 51, 13 789 (1995).
29. M. Hage-Ali and P. Siffert: Status of semi-insulating cadmium telluride for bnuclear radiation detectors. Nucl. Instr. Meth. A 322, 313 (1992).
30. xTe. Phys. Rev. B 55, 6945 (1997).
31. P. Emanuelsson, P. Omling, B.K. Meyer, M. Wienecke, and M. Schenk: Identification of the cadmium vacancy in CdTe by electron-paramagnetic resonance. Phys. Rev. B. 47, 15578 (1993).
32. A. Rose: Concepts in photoconductivity and allied problems, (Robert E. Krieger Publishing, New York, 1978), p. 43.
33. R.H. Bube: Photoconductivity of solids, (John Wiley & Sons, New York, 1960), p. 325.
34. X. Mathew: Photo-induced current transient spectroscopic study of the traps in CdTe. Sol. Energy Mater. Sol. Cells 76, 225 (2003).
35. C.P. Ye and J.H. Chen: Studies of defects in N-type CdTe by charge transient spectroscopy. J. Appl. Phys. 67, 2475 (1990).
36. R.E. Kremer and W.B. Leigh: Deep levels in CdTe. J. Cryst. Growth 86, 490 (1988).
37. G.F. Neumark: Defects in wide band gap II-VI crystals. Mater. Sci. Eng. R21, 1 (1997).
38. x for nuclear detectors: facts and fictions, Nucl. Instr. Methods Phys. Res. A 428, 38 (1999).
39. T. Takebe, J. Saraie, and H. Matsunami: Detailed characterization of deep centers in CdTe-photoionization and thermal ionization properties. J. Appl. Phys. 53, 457 (1982).
40. H. Sitter, D. As, J. Humenberger, and A. Lopez-Otero: Investigation of deep levels in epitaxially grown CdS and CdTe layers. J. Cryst. Growth 59, 229 (1982).
41. L.C. Isett and P.K. Raychaudhuri: Deep levels in CdTe. J. Appl. Phys. 55, 3605 (1984).
42. G.M. Khattak and C.G. Scott: Characterization of deep levels in N-type CdTe. J. Phys: Condens. Matter 3, 8619 (1991).
43. C. Eiche, W. Joerger, M. Fiederle, D. Ebling, R. Schwarz, and K.W. Benz: Investigation of CdTe:CI grown from the vapor-phase under microgravity conditions with time dependent charge measurements and photoinduced current transient spectroscopy. J. Cryst. Growth 146, 98 (1995).
44. A. Balcioglu, R.K. Ahrenkiel, and F. Hasoon: Deep-level impurities in CdTe/CdS thin-film solar cells. J. Appl. Phys. 88, 7175 (2000).
45. 0.2Te. Phys. Rev. B 54, 7622 (1996).
46. A. Cavallini, B. Fraboni, W. Dusi, M. Zanarini, and P. Siffert: Deep levels and compensation in gamma-irradiated CdZnTe. Appl. Phys. Lett. 77, 3212 (2000).
47. A. Cavallini, B. Fraboni, W. Dusi, N. Auricchio, P. Chirco, M. Zanarini, P. Siffert, and P. Fougeres: Radiation effects on II-VI compound-based detectors. Nucl. Instrum. Method A476, 770 (2002).
48. E.A. Bobrova, Yu.V. Klevkov, S.A. Medvedev, and A.F. Plotnikov: A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals. Semiconductors 36, 1341 (2002).