Reactive-ion etching of Ge2Sb2Te5 in CF4/Ar plasma for non-volatile phase-change memories

Microelectronic Engineering

Volumn 85, Issue 8, 2008, Pages 1699-1704

  Feng, Gaoming ^a,b   Liu, Bo ^a   Song, Zhitang ^a   Feng, Songlin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Chalcogenide random access memory; Ge2Sb2Te5 (GST); Reactive ion etching

Indexed keywords

ETCHING; GERMANIUM;

REACTIVE ION ETCHING (REI);

REACTIVE ION ETCHING;

EID: 48949115619     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.036     Document Type: Article

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