Influence of temperature on the etching rate of SiO2 in CF 4 + O2 plasma

Microelectronic Engineering

Volumn 83, Issue 2, 2006, Pages 193-196

  Knizikevicius R ^a   Kopustinskas, V ^b  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

^b KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

CF4 + O2 plasma; Plasmochemical etching; SiO2

Indexed keywords

ELECTROCHEMISTRY; MOLECULAR DYNAMICS; PLASMAS; THERMAL EFFECTS;

CF4 + O2 PLASMA; LATERAL UNDERCUTTING; PLASMOCHEMICAL ETCHING;

SILICON;

EID: 32044441835     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.08.004     Document Type: Article

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