High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 40-43

  Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a   Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TEMPERATURE;

ELECTRON CONCENTRATIONS; IONIZATION ENERGY; SELF-COMPENSATION EFFECTS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0346885878     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303409     Document Type: Article

References (11)

1. V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, G. Simin, M. A. Kahn, R. Gaska, and M. S. Shur, Appl. Phys. Lett. 79, 4240 (2001).
2. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 399 (2001).
3. V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, and M. Holtz, Appl. Phys. Lett. 82, 1323 (2003).
4. M. Kasu and N. Kobayashi, Appl. Phys. Lett. 79, 3642 (2001).
5. Y. Taniyasu, M. Kasu, and N. Kobayashi, Appl. Phys. Lett. 81, 1255 (2002).
6. Y. Taniyasu, M. Kasu, and N. Kobayashi, unpublished.
7. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemono, M. Sano, and K. Chocho, J. Appl. Phys. 36, L1568 (1997).
8. P. Kozodoy, M. Hansen, S.P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 74, 3681 (1999).
9. K. Kumakura and N. Kobayashi, J. Appl. Phys. 38, L1012 (1999).
10. G. Martin, A. Botckarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996).
11. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).