Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

Proceedings of the Indian Academy of Sciences: Chemical Sciences

Volumn 115, Issue 5-6 SPEC. ISS., 2003, Pages 401-410

  Balaji, S ^a   Mohan, S ^a   Muthu, D V S ^a   Sood, A K ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Atomic force microscopy; Interference enhanced Raman spectroscopy; Ion beam sputtering; Phonon confinement; Ultra thin Ge films

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); FILM GROWTH; FREE ENERGY; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; SPUTTER DEPOSITION; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; GERMANIUM; ION BEAMS; PHONONS; SEMICONDUCTING SILICON; SPUTTERING;

INTERFERENCE ENHANCED RAMAN SCATTERING; ION BEAM SPUTTER DEPOSITION; PHONON CONFINEMENT; VOLMER-WEBER GROWTH;

SEMICONDUCTING GERMANIUM; NANOSTRUCTURED MATERIALS;

INTERFERENCE ENHANCED RAMAN SPECTROSCOPY; ION BEAM SPUTTERING; PHONON CONFINEMENT; ULTRA THIN GE FILMS;

EID: 17744400084     PISSN: 02534134     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02708231     Document Type: Article

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