SOI-CMOS based single crystal silicon microheaters for gas sensors

Proceedings of IEEE Sensors

Volumn , Issue , 2006, Pages 460-463

  Iwaki, T ^a   Covington, J A ^a   Gardner, J W ^a   Udrea, F ^b   Blackman, C S ^c   Parkin, I P ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC POWER UTILIZATION; ELECTRON BEAM LITHOGRAPHY; ETHANOL; GAS DETECTORS; GASES; NONMETALS; OPTICAL DESIGN; OXIDES; POWDERS; SILICON; SILICON WAFERS; SINGLE CRYSTALS; STANDARDS; TUNGSTEN; TUNGSTEN COMPOUNDS;

BACK-ETCHING; BURN-IN; CALORIMETRIC GAS SENSORS; CHEMICAL VAPOUR DEPOSITION; CHEMORESISTIVE SENSORS; CMOS PROCESSING; DEEP RIE; GAS SENSORS; HIGH TEMPERATURES; HIGH-TEMPERATURE GAS SENSORS; MICRO-HEATERS; MICRO-HOTPLATES; OPERATING TEMPERATURES; POWER CONSUMPTION; SILICON-ON -INSULATOR; SINGLE-CRYSTAL-SILICON; SOURCE AND DRAIN; THERMAL STABILITY; TUNGSTEN OXIDE; ULTRA-LOW-POWER; UNIT COST;

SENSORS;

EID: 48349101719     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2007.355505     Document Type: Conference Paper

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