Structural, electrical, and magnetic properties of Bi0.98 La0.02 Fe0.70 Sc0.30 O3 thin film prepared on LaAlO3 substrates using a chemical solution process

Electrochemical and Solid-State Letters

Volumn 11, Issue 9, 2008, Pages

  Huang, A ^a   Shannigrahi, S R ^a   Lin, Vivian K X ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; COLLOIDS; DIFFRACTION; FERROELECTRICITY; FERROMAGNETISM; FILM PREPARATION; GELATION; HOLOGRAPHIC INTERFEROMETRY; LANTHANUM; MAGNETIC PROPERTIES; METALLIZING; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; POLARIZATION; SOL-GEL PROCESS; THICK FILMS; THIN FILMS; VAPOR DEPOSITION;

CHEMICAL SOLUTIONS; COERCIVE FIELDS; DIELECTRIC AND FERROELECTRIC PROPERTIES; ELECTROCHEMICAL SOCIETY (ECS); FERROELECTRIC POLARIZATION; INTERDIGITATED ELECTRODE (IDE); LA DOPING; MAGNETIC (CE); PREFERRED ORIENTATION (PO); REMNANT MAGNETIZATION; REMNANT POLARIZATIONS; ROOM-TEMPERATURE (RT); SOL - GEL; X RAY PHOTOELECTRON SPECTROSCOPY (XPS); X-RAY DIFFRACTION (XRD) PATTERNS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 48249148727     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2949984     Document Type: Article

References (28)

1. J. F. Scott, Nat. Mater. 1476-1122 10.1038/nmat1868, 6, 256 (2007).
2. M. Fiebig, Th. Lottermoser, D. Frohlich, A. V. Golsev, and R. V. Pisarev, Nature (London) 0028-0836 10.1038/nature01077, 419, 818 (2002).
3. M. Fiebig, J. Phys. D 0022-3727 10.1088/0022-3727/38/8/R01, 38, R123 (2005).
4. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, Science 0036-8075 10.1126/science.1080615, 299, 1719 (2003).
5. C. Ederer and N. A. Spaldin, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71. 060401, 71, 060401 (2005).
6. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 0003-6951 10.1063/1.1862336, 86, 062903 (2005).
7. Y. W. Li, J. L. Sun, J. Chen, X. J. Meng, and J. H. Chu, J. Cryst. Growth, 285, 595 (2005).
8. B. Ruette, S. Zvyagin, A. P. Pyatakov, A. Bush, J. F. Li, V. I. Belotelov, A. K. Zvezdin, and D. Viehland, Phys. Rev. B 0163-1829 10.1103/PhysRevB.69.064114, 69, 064114 (2004).
9. S. Yasui, H. Uchida, H. Nakaki, K. Nishida, H. Funakubo, and S. Koda, Appl. Phys. Lett. 0003-6951 10.1063/1.2756356, 91, 022906 (2007).
10. J. Li, J. Wang, M. Wutting, R. Ramesh, N. Wang, B. Ruette, A. P. Pyatakov, A. K. Zvezdin, and D. Viehland, Appl. Phys. Lett. 0003-6951 10.1063/1.1764944, 84, 5261 (2004).
11. J. Wang, H. Zheng, Z. Ma, S. Prasertchoung, M. Wutting, R. Droopad, J. Yu, K. Eisenbeiser, and R. Ramesh, Appl. Phys. Lett. 0003-6951 10.1063/1.1799234, 85, 2574 (2004).
12. Y. H. Lee, J. M. Wu, and C. H. Lai, Appl. Phys. Lett. 0003-6951 10.1063/1.2167793, 88, 042903 (2006).
13. D. Lee, M. G. Kim, S. Ryu, H. M. Jang, and S. G. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.1941474, 86, 222903 (2005).
14. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.1667612, 84, 1731 (2004).
15. C. Y. Yau, R. Palan, K. Tran, and R. C. Buchanan, Appl. Phys. Lett. 0003-6951 10.1063/1.1849422, 86, 032907 (2005).
16. T. Kojima, T. Sakai, T. Watanabe, and H. Funakubo, Appl. Phys. Lett. 0003-6951 10.1063/1.1468914, 80, 2746 (2002).
17. J. K. Lee, C. H. Kim, H. S. Suh, and K. S. Hong, Appl. Phys. Lett. 0003-6951 10.1063/1.1477272, 80, 3593 (2002).
18. Y. Y. Yao, C. H. Song, P. Bao, D. Su, X. M. Liu, J. S. Zhu, and Y. N. Wang, J. Appl. Phys. 0021-8979 10.1063/1.1649456, 95, 3126 (2004).
19. Y. P. Liu and J. M. Wu, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.2720633, 10, G39 (2007).
20. Y. P. Lee and J. M. Wu, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.2745123, 10, G58 (2007).
21. S. K. Singh, K. Maruyama, and H. Ishiwara, J. Phys. D 0022-3727 10.1088/0022-3727/40/9/004, 40, 2705 (2007).
22. Y. Zhong, G. Hu, and T. A. Tang, Jpn. J. Appl. Phys., Part 1, 42, 7424 (2003).
23. I. Sosnowska, W. Schafer, W. Kockelmann, K. H. Andersen, and I. O. Troyanchuk, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s003390201604, 74, S1040 (2002).
24. H. Uchida, R. Ueno, H. Funakubo, and S. Koda, J. Appl. Phys. 0021-8979 10.1063/1.2210167, 100, 014106 (2006).
25. S. R. Shannigrahi, A. Huang, N. Chandrasekhar, D. Tripathy, and A. O. Adeyeye, Appl. Phys. Lett. 0003-6951 10.1063/1.2430652, 90, 022901 (2007).
26. F. Bai, J. Wang, M. Wuttig, J. F. Li, N. Wang, A. P. Pyatakov, A. K. Zvezdin, L. E. Cross, and D. Viehland, Appl. Phys. Lett. 0003-6951 10.1063/1.1851612, 86, 032511 (2005).
27. F. Gao, Y. Yuan, K. F. Wang, X. Y. Chen, F. Chen, J. M. Liu, and Z. F. Ren, Appl. Phys. Lett. 0003-6951 10.1063/1.2345825, 89, 102506 (2006).
28. F. Gao, X. Y. Qiu, Y. Yuan, B. Xu, Y. Y. Wen, F. Yuan, L. Y. Lv, and J. M. Liu, Thin Solid Films 0040-6090 10.1016/j.tsf.2007.01.035, 515, 5366 (2007).