Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Chen, Bin ^a,b   Chen, Jun ^a   Sekiguchi, Takashi ^a,b   Ohyanagi, Takasumi ^c   Matsuhata, Hirofumi ^c   Kinoshita, Akimasa ^c   Okumura, Hajime ^c   Fabbri, Filippo ^a,d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FAULT CURRENTS; ELECTRIC PROPERTIES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE;

AMERICAN INSTITUTE OF PHYSICS (AIP); BASAL PLANE DISLOCATION (BPD); CATHODOLUMINESCENCE (CL); ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRON-BEAM-INDUCED CURRENT (EBIC); FAULT POSITION; PARTIAL DISLOCATIONS; QUANTUM WELLS; SIC SCHOTTKY DIODE;

STACKING FAULTS;

EID: 48249119646     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2960339     Document Type: Article

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