Characterization of the segregation of arsenic at the interface SiO 2/Si

Materials Research Society Symposium Proceedings

Volumn 994, Issue , 2007, Pages 211-216

  Steen, Christian ^a   Pichler, Peter ^a,b   Ryssel, Heiner ^a,b   Pei, Lirong ^c   Duscher, Gerd ^c,d   Werner, Matt ^e   Van Den Berg, Jaap A ^e   Windl, Wolfgang ^f  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF SALFORD   (United Kingdom)

^f OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMS; DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; ETCHING; FLUORESCENCE SPECTROSCOPY; SILICA; SILICON OXIDES;

EQUILIBRIUM EFFECTS; GRAZING INCIDENCE; IMPLANTATION DOSE; MEDIUM ENERGY ION SCATTERING; SI/SIO2 INTERFACE; SILICON LAYER; X RAY FLUORESCENCE SPECTROSCOPY; Z CONTRASTS;

SEMICONDUCTOR DEVICES;

EID: 45749152511     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0994-f08-02     Document Type: Conference Paper

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