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Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 3, 2008, Pages

Electronic structure of Ga1-x Crx N and Si-doping effects studied by photoemission and x-ray absorption spectroscopy

(20) Song, G S a Kobayashi, M a Hwang, J I a Kataoka, T a Takizawa, M a Fujimori, A a,b Ohkouchi, T b Takeda, Y b Okane, T b Saitoh, Y b Yamagami, H b,c Chang, F H d Lee, L d Lin, H J d Huang, D J d Chen, C T d Kimura, S e Funakoshi, M e Hasegawa, S e Asahi, H e

a UNIVERSITY OF TOKYO (Japan)

b JAPAN ATOMIC ENERGY AGENCY (Japan)

c KYOTO SANGYO UNIVERSITY (Japan)

d NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

e OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47949121905 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.78.033304 Document Type: Article

Times cited : (7)

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