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Volumn 273, Issue 1-2, 2004, Pages 149-155
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Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy
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Author keywords
A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting III V materials
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Indexed keywords
ELECTRONIC STRUCTURE;
LATTICE CONSTANTS;
MAGNETIC MATERIALS;
MOLECULAR BEAM EPITAXY;
NITRIDES;
SEMICONDUCTOR MATERIALS;
SOLUBILITY;
ATOMIC CONFIGURATION;
DILUTED MAGNETIC SEMICONDUCTORS;
PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY;
SOLUBILITY LIMITS;
GALLIUM COMPOUNDS;
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EID: 9944241726
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.128 Document Type: Article |
Times cited : (19)
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References (18)
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