MBE growth and properties of GaCrN

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 327-330

  Hashimoto, M ^a   Zhou, Y K ^a   Kanamura, M ^a   Katayama Yoshida, H ^a   Asahi, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES;

PEAK ENERGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037382854     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02276-5     Document Type: Conference Paper

References (9)

1. Munekata H., Ohno H., von Molnar S., Segmuller A., Chang L.L., Esaki L. Phys. Rev. Lett. 63:1989;1849.
2. Ohno H., Shen A., Matsukura F., Owa A., Endo A., Iye Y. Appl. Phys. Lett. 69:1996;363.
3. Matsukura F., Ohno H., Shen A., Sugawara Y. Phys. Rev. B. 57:1998;R2037.
4. Sato K., Katayama-Yoshida H. Jpn. J. Appl. Phys. 40:2001;L485.
5. Dietl T., Ohno H., Matsukura F., Cibert J., Ferrand D. Science. 287:2000;1019.
6. Corliss L.M., Elliott N., Hastings J.M. Phys. Rev. 79:1950;350.
7. Häussermann U., Viklund P., Boström M., Norrestam R., Simak S.I. Phys. Rev. B. 63:2001;125118.
8. M. Hashimoto, Y.K. Zhou, M. Kanamura, R. Asano, H. Tanaka, H. Asahi, in preparation.
9. Iwata K., Asahi H., Yu S.J., Asami K., Fujita H., Fushida M., Gonda S. Jpn. J. Appl. Phys. 35:1996;L289.