Dopant profile engineering of CMOS devices formed by non-melt laser spike annealing

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 144-145

  Shima, Akio ^a   Wang, Yun ^b   Upadhyaya, Deepak ^b   Feng, Lucia ^b   Talwar, Somit ^b   Hiraiwa, Atsushi ^a  

^a HITACHI LTD   (Japan)

^b Ultratech Stepper Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); LASER APPLICATIONS; OPTIMIZATION; RAPID THERMAL ANNEALING;

CARRIER DEGRADATION; DOPANT PROFILE ENGINEERING; LASER SPIKE ANNEALING (LSA); SOURCE/DRAIN JUNCTION PROFILE;

MOS DEVICES;

EID: 33745170708     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469246     Document Type: Conference Paper

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