Newly found anomalous gate leakage current (AGLC) for 65 nm node and beyond, and its countermeasure using nitrogen implanted poly-Si

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 30-31

  Togo, M ^a   Suzuki, T ^a   Hasegawa, E ^b   Koyama, S ^b   Fukai, T ^a   Sakakidani, A ^a   Miyake, S ^a   Watanabe, T ^a   Yamamoto, I ^b   Tanaka, M ^d   Kawashima, Y ^c   Kunimune, Y ^c   Ikeda, M ^a   Imai, K ^a  

^a Advanced Device Development Division   (Japan)

^b Process Development Division   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

^d NEC CORPORATION   (Japan)

Author keywords

Gate leakage current; Nitrogen implantation; Phosphorus; Poly Si; Reliability; SiON; Yield

Indexed keywords

ELECTRODES; GATE DIELECTRICS; NITROGEN; OPTIMIZATION; SILICON COMPOUNDS;

ANOMALOUS GATE LEAKAGE CURRENT (AGLC); NITROGEN IMPLANTATION;

LEAKAGE CURRENTS;

EID: 41149085629     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Y. Nakahara et al., IEDM Tech. Dig., p. 281, 2003.
2. D. Matsushita et al., Symp. VLSI Tech., p. 172, 2004.
3. M. Togo et al., IEEE TED, p. 1903, 2002.
4. A. Alberti et al., Appl. Phys. Lett., p. 3419, 2001.