Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1865-1868

  Singanamalla, R ^a,b   Yu, H ^b   O'Sullivan, B J ^b   Petry, J ^c   Mercha, A ^b   Paraschiv, V ^b   Volders, H ^b   Kubicek, S ^b   De Meyer, K ^a,b   Biesemans, S ^b  

^a Katholieke Universiteit Leuven   (Belgium)

^b IMEC   (Belgium)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

AlO; Dielectric capping; Effective work function; Metal gate; pMOSFET; Poly Si TiN SiON; SiON; TiN

Indexed keywords

ALUMINA; CAPACITANCE; ELECTRIC CURRENTS; LEAKAGE CURRENTS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

DIELECTRIC CAPPING; EFFECTIVE WORK FUNCTION; METAL GATES;

MOSFET DEVICES;

EID: 34248633391     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.095     Document Type: Article

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