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Volumn 45, Issue 4 B, 2006, Pages 3101-3105

Hot carrier reliability study in body-tied fin-type field effect transistors

Author keywords

Body tied FinFET; Device lifetime; Hot carrier effect; Impact ionization; Reliability; Substrate current

Indexed keywords

CHARGE CARRIERS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); IMPACT IONIZATION; RELIABILITY; STRESSES;

EID: 33646905668     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3101     Document Type: Article
Times cited : (3)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.