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Volumn 45, Issue 4 B, 2006, Pages 3101-3105
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Hot carrier reliability study in body-tied fin-type field effect transistors
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Author keywords
Body tied FinFET; Device lifetime; Hot carrier effect; Impact ionization; Reliability; Substrate current
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Indexed keywords
CHARGE CARRIERS;
ELECTRIC POTENTIAL;
GATES (TRANSISTOR);
IMPACT IONIZATION;
RELIABILITY;
STRESSES;
BODY-TIED FINFET;
DEVICE LIFETIME;
HOT-CARRIER EFFECT;
SUBSTRATE CURRENT;
FIELD EFFECT TRANSISTORS;
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EID: 33646905668
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.45.3101 Document Type: Article |
Times cited : (3)
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References (9)
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