Application of a gate blocking layer on glass by using TiO2 as a high-k material for a nonvolatile memory

Journal of the Korean Physical Society

Volumn 52, Issue 6, 2008, Pages 1863-1867

  Lee, Kwangsoo ^a   Jung, Sungwook ^a   Son, Hyukjoo ^a   Jang, Kyungsoo ^a   Lee, Jeoungin ^a   Park, Hyungjun ^a   Kim, Jaehong ^a   Kim, Kyunghae ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Atmospheric pressure chemical vapor deposition (APCVD); High dielectric constant (high k); Nonvolatile memory (NVM); Titanium dioxide (TiO2)

Indexed keywords

EID: 46849120593     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.52.1863     Document Type: Article

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