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Volumn 83, Issue 11-12, 2006, Pages 2184-2188

Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives

Author keywords

Characterization; Coplanar wave guide; Dielectrics; High frequency; High K; Permittivity

Indexed keywords

CHARACTERIZATION; DIELECTRIC MATERIALS; INTEGRATED CIRCUITS; OPTIMIZATION; PERMITTIVITY; RESONANCE; WAVEGUIDES;

EID: 33751223218     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.030     Document Type: Article
Times cited : (15)

References (6)
  • 1
    • 33751209978 scopus 로고    scopus 로고
    • A. Rotondaro et al., Advanced CMOS transistors with a novel HfSiON gate dielectric, in: Technology Symposium On VLSI 2002, Honolulu, June 2002.
  • 2
    • 33751230358 scopus 로고    scopus 로고
    • A.B. Chen et al., RF MIM capacitors using High-K Al2O3 and AlTiOx dielectrics, in: IEEE MTT-S 2002, Seattle, June 2002.
  • 3
    • 27744564482 scopus 로고    scopus 로고
    • Integrated High-K (K ∼ 19) MIM capacitor with Cu/Low-K interconnects for RF application
    • Yu M.B., et al. Integrated High-K (K ∼ 19) MIM capacitor with Cu/Low-K interconnects for RF application. IEEE Electron Device Letters 26 N° 11 (2005)
    • (2005) IEEE Electron Device Letters , vol.26 , Issue.11
    • Yu, M.B.1
  • 5
    • 33751235755 scopus 로고    scopus 로고
    • Agilent Network Analysis Applying the 8510 TRL calibration For Non-coaxial Measurements - Product Note 8510-8A.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.