High energy density metal-insulator-metal capacitors with Ba [(Ni12, W12)0.1 Ti0.9] O3 thin films

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Karan, N K ^a   Saavedra Arias, J J ^a   Perez, M ^a   Thomas, R ^a   Katiyar, R S ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; DIELECTRIC MATERIALS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MIM DEVICES; PERMITTIVITY; POWER ELECTRONICS; THIN FILMS;

CAPACITANCE DENSITY; CHEMICAL SOLUTION DEPOSITION TECHNIQUE; ENERGY DENSITY; FREQUENCY DEPENDENCES;

CAPACITORS;

EID: 38049036762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828700     Document Type: Article

References (17)

1. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 2005).
2. K. M. Slenes, P. Winsor, T. Scholz, and M. Hudis, IEEE Trans. Magn. IEMGAQ 0018-9464 37, 324 (2001).
3. F. Zhao, Z. X. Yue, J. Pei, H. Zhuang, Z. L. Gui, and L. T. Li, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1551-2916.2007.01801.x 90, 2461 (2007).
4. F. Zhao, Z. Yue, J. Pei, D. Yang, Z. Gui, and L. Li, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2767190 91, 052903 (2007).
5. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977).
6. R. Thomas, V. K. Varadan, S. Komerneni, and D. C. Dube, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1367318 90, 1480 (2001).
7. P. Li and T. M. Lu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.43. 14261 43, 14261 (1991).
8. P. R. Emtage and W. Tantraporn, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.8.267 8, 267 (1962).
9. J. Frenkel, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.54.647 54, 647 (1938).
10. P. Zubko, D. J. Jung, and J. F. Scott, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2382479 100, 114113 (2006).
11. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
12. C. J. Peng and S. B. Krupanidhi, J. Mater. Res. JMREEE 0884-2914 10, 708 (1995).
13. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Vol. 1, p. 28.
14. H. Yang, K. Tao, B. Chen, X. Qiu, B. Xu, and B. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1529087 81, 4817 (2002).
15. S. T. Chang and J. Y. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1436527 80, 655 (2002).
16. J. McPherson, J.-Y. kim, A. Shanware, and H. Mogul, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1565180 82, 2121 (2003).
17. Y. Iniuishi and S. Uematsu, J. Phys. Soc. Jpn. JUPSAU 0031-9015 10.1143/JPSJ.13.761 13, 761 (1958).