Dysprosium scandate thin films prepared by metal organic chemical vapor deposition on Pt/TiOx/SiO2/Si substrates for MIM capacitor applications

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 529-540

  Thomas, R ^a,b   Karan, N K ^a   Ehrhart, P ^b   Waser, R ^b   Katiyar, R S ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DYSPROSIUM; DYSPROSIUM COMPOUNDS; ELECTRIC FIELDS; INDUSTRIAL CHEMICALS; LEAKAGE CURRENTS; LOGIC GATES; METAL INSULATOR BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIM DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; PLATINUM METALS; SILICA; SILICON; THIN FILMS;

CLAUSIUS MOSOTTI EQUATION; ENERGY STORAGE DENSITY; EQUIVALENT SIO2 THICKNESS; METAL INSULATOR METALS; METAL ORGANIC; MIM CAPACITORS; POLYCRYSTALLINE; ROOT MEAN SQUARE ROUGHNESS;

DIELECTRIC MATERIALS;

EID: 45249124775     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779588     Document Type: Conference Paper

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