High-rate growth and nitrogen distribution in homoepitaxial chemical vapour deposited single-crystal diamond

Chinese Physics Letters

Volumn 25, Issue 5, 2008, Pages 1803-1806

  Li, Hong Dong ^a   Zou, Guang Tian ^a   Wang, Qi Liang ^a   Cheng, Shao Heng ^a   Li, Bo ^a   Lü, Jian Nan ^a   Lü, Xian Yi ^a   Jin, Zeng Sun ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND FILMS; FILM GROWTH; NITROGEN; NITROGEN PLASMA; PLASMA CVD; SURFACE DEFECTS;

CHEMICAL VAPOR DEPOSITED; HIGH RATE; HIGH-RATE GROWTH; HOMOEPITAXIAL; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; NITROGEN DISTRIBUTION; POLYCRYSTALLINE CVD DIAMOND; REACTANT GAS; SINGLE CRYSTAL DIAMOND; TOP SURFACE;

SINGLE CRYSTALS;

EID: 46749104485     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/5/076     Document Type: Article

References (15)

1. Yan C S et al 2002 Proc. Nat. Acad. Sci. 99 12523
2. Mokuno Y et al 2006 Diamond Relat. Mater. 15 455
3. Tallaire A et al 2006 Diamond Relat. Mater. 15 1700
4. Achard J et al 2007 Diamond Relat. Mater. 16 685
5. Okushi H et al 2002 J. Crystal Growth 237-239 1269
6. Charles S J et al 2004 Phys. Stat. Sol. A 11 2473 and references therein.
7. Prawer S and Nemanich R J 2004 Phil. Trans. R. Soc. London A 362 2537
8. Yamada H et al 2007 Diamond Relat. Mater. 16 576
9. Bernholc J et al 1988 Phys. Rev. Lett. 61 2689
10. Mainwood A 1994 Phys. Rev. B 49 7934
11. Collins A T 1978 J. Phys. C 11 L417
12. Collins A T 1980 J. Phys. C 13 2641
13. Samlenski R et al 1995 Appl. Phys. Lett. 67 2798
14. Wu X H et al 1996 Japan. J. Appl. Phys. 35 L1648
15. Li H D et al 2002 Japan. J. Appl. Phys. 41 L732