V-shaped defects in AlGaN/GaN superlattices grown in thin undoped-GaN layers on sapphire substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 6 B, 2002, Pages

  Li, Hongdong ^a   Wang, Tao ^a   Liu, Yuhuai ^a   Ao, Jinping ^b   Sakai, Shiro ^b  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Nitride Semiconductors Co Ltd   (Japan)

Author keywords

AlGaN GaN superlattice; TEM; V shaped defect

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTOR SUPERLATTICES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; SAPPHIRE SUBSTRATE;

GALLIUM NITRIDE;

EID: 0037098585     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l732     Document Type: Letter

References (12)