Predominant physical quantity dominating macroscopic surface shape of diamond synthesized by microwave plasma CVD

Diamond and Related Materials

Volumn 16, Issue 3, 2007, Pages 576-580

  Yamada, Hideaki ^a   Mokuno, Yoshiaki ^a   Chayahara, Akiyoshi ^a   Horino, Yuji ^a   Shikata, Shin ichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Homoepitaxial growth; Microwave plasma CVD; Simulation; Single crystal diamond

Indexed keywords

EPITAXIAL GROWTH; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); TEMPERATURE DISTRIBUTION;

HOMOEPITAXIAL GROWTH; MICROWAVE PLASMA CVD; MICROWAVE PLASMAS; SINGLE CRYSTAL DIAMOND;

DIAMONDS;

EID: 33846811572     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.11.067     Document Type: Article

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