Influence of gate dielectrics on the electrical properties of F8T2 polyfluorene thin-film transistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5217, Issue , 2003, Pages 159-166

  Swensen, James ^a   Kanicki, Jerzy ^a   Heeger, Alan J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

F8T2; Gate dielectrics; Polymer thin film transistor; Titanium oxide

Indexed keywords

ANISOTROPY; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; DIELECTRIC FILMS; ELECTRODES; MIM DEVICES; PERMITTIVITY; PHOTOLITHOGRAPHY; SILICON NITRIDE; SPUTTERING;

F8T2; GATE DIELECTRICS; POLYMER THIN-FILM TRANSISTOR;

THIN FILM TRANSISTORS;

EID: 2342643435     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.507630     Document Type: Conference Paper

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