Crystalline oxides on semiconductors: A future for the nanotransistor

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 10, 2004, Pages 2279-2286

  Nardelli, M Buongiorno ^a,b   Walker, F J ^b   McKee, R A ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; OXIDE SEMICONDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE;

CHEMICAL BONDINGS; CRYSTALLINE OXIDES; FUNDAMENTAL PROPERTIES; HIGH-PERFORMANCE SIMULATION; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR SYSTEMS; SEMICONDUCTOR TECHNOLOGY; STRUCTURAL AND ELECTRONIC PROPERTIES;

CHEMICAL BONDS;

EID: 4644287511     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200404942     Document Type: Conference Paper

References (15)

1. http://public.itrs.net/HomeStart.htm
2. F. J. Walker and R. A. McKee, High-K Crystalline Gate Dielectrics - A Research Perspective (Sematech, Austin, Texas, in press, 2004).
3. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
4. R. A. McKee, F. J. Walker, and M. F. Chisholm, Science 293, 468 (2001).
5. I. Bark and O. Knacke, Thermodynamic Properties of Inorganic Substances (Springer, Berlin, 1973).
6. R. A. McKee, F. J. Walker, M. Buongiorno Nardelli, W. A. Shelton, and G. M. Stocks, Science, 300, 1726 (2003).
7. Calculations in this work have been done using the PWscf package (S. Baroni, A. Dal Corso, S. De Gironcoli and P. Giannozzi, http://www.pwscf.org).
8. J. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981). D. Ceperley and B. Alder, Phys. Rev. Lett. 45, 566 (1980).
9. J. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981). D. Ceperley and B. Alder, Phys. Rev. Lett. 45, 566 (1980).
10. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
11. R. T. Tung, Phys. Rev. B 20, 205310 (2001).
12. T. P. Ma and J. P. Han, IEEE Electron Device Lett. 23, 386 (2002).
13. N. A. Bojarczuk, M. Copel, S. Guha, V. Narayanan, E. J. Preisler, F. M. Ross, and H. Shang, Appl. Phys. Lett. 83, 5443 (2003).
14. B. T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, J. Lettieri, J. H. Haeni, D. G. Schlom, W. Tian, X. Q. Pan, F. J. Walker, and R. A. McKee, Appl. Phys. Lett. 80, 4801 (2002).
15. A. C. Tuan, T. C. Kaspar, T. Droubay, J. W. Rogers, and S. A. Chambers, Appl. Phys. Lett. 83, 3734 (2003).