Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers

Journal of Lightwave Technology

Volumn 26, Issue 11, 2008, Pages 1387-1395

  Yang, Hung Pin D ^a   Hsu, I Chen ^b   Chang, Ya Hsien ^b   Lai, Fang I ^c   Yu, Hsin Chieh ^d   Lin, Gray ^c   Hsiao, Ru Shang ^a   Maleev, Nikolai A ^e   Blokhin, Sergej A ^e   Kuo, Hao Chung ^b   Chi, Jim Y ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c YUAN ZE UNIVERSITY   (Taiwan)

^d NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

Photonic crystal (PhC); Quantum dot (QD); Submonolayer (SML); Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ACTIVE REGION (AR); FIBER OPTIC COMMUNICATIONS; PHOTONIC-CRYSTAL VERTICAL-CAVITY SURFACE-EMITTING LASERS; QD LAYERS; SUB MONOLAYERS;

EID: 46349098517     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.922172     Document Type: Article

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