Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

IEEE Photonics Technology Letters

Volumn 13, Issue 9, 2001, Pages 927-929

  Young, E W ^b   Choquette, K D ^a,b   Chuang, S L ^a,b   Geib, K M ^c   Fischer, A J ^c   Allerman, A A ^c  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Laser modes; Modulation; Vertical cavity surface emitting laser

Indexed keywords

ION IMPLANTATION; LASER MODES; PHOTONS; PULSE MODULATION; SEMICONDUCTOR DEVICE STRUCTURES;

VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0035440039     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.942649     Document Type: Article

References (8)

1. 1-xAs-AlAs-GaAs quantum well heterostructures and superlattices
2. Fabrication and performance of vertical cavity surface-emitting lasers
3. Transverse mode selection in large-area oxide-confined vertical-cavity surface-emitting lasers using a shallow surface relief
4. Improving single-mode VCSEL performance by introducing a long monolithic cavity
5. Single transverse mode selectively oxidized vertical cavity lasers
6. Dynamic, polarization, and transverse mode characteristics of vertical cavity surface-emitting lasers
7. Performance of gain-guided surface-emitting lasers with semiconductor distributed Bragg reflectors
8. Thermal lensing effects in small oxide confined vertical-cavity surface-emitting lasers