Microwave noise characteristics of AlGaN/GaN HEMTs on, SiC substrates for broad-band low-noise amplifiers

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 6, 2004, Pages 259-261

  Lee, J W ^a,b   Kuliev, A ^a   Kumar, V ^a   Schwindt, R ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Kyung Hee University   (South Korea)

Author keywords

AlGaN; GaN; HEMTs; Microwave noise; Minimum noise figure

Indexed keywords

AMPLIFIERS (ELECTRONIC); GALLIUM NITRIDE; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SENSITIVITY ANALYSIS; SILICON CARBIDE;

ALGAN; MICROWAVE NOISE; MINIMUM NOISE FIGURE; NOISE RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3042594498     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.828026     Document Type: Article

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