An assessment of effective mobility variation during negative bias temperature stress

ECS Transactions

Volumn 6, Issue 3, 2007, Pages 301-311

  Zhang, J F ^a   Chang, M H ^a  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL EQUATIONS; INSULATING MATERIALS; LOW-K DIELECTRIC; NEGATIVE BIAS TEMPERATURE INSTABILITY; NITRIDES; PLASTIC FILMS; SILICA; SILICON NITRIDE; THRESHOLD VOLTAGE;

EFFECTIVE MOBILITIES; ELECTRICAL FIELD; LOW FIELD MOBILITY; MOBILITY VARIATION; NEGATIVE BIAS; NUMERICAL SOLUTION; POSITIVE CHARGES; THRESHOLD VOLTAGE SHIFTS;

BIAS VOLTAGE;

EID: 45949109222     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728803     Document Type: Conference Paper

References (17)

1. B. E. Deal, M. Sklar, A. S. Grove, and E. H. Snow, J. Electrochem. Soc., 114, 266 (1967).
2. K. O. Jeppson, and C. M. Svensson, J. Appl. Phys., 48, 2004 (1977).
3. C. E. Blat, E. H. Nicollian, and E. H. Poindexter, J. Appl. Phys., 69, 1712 (1991).
4. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, and L. Chan, Appl. Phys. Lett., 82, 1881 (2003).
5. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K. Imai, and T. Horiuchi, in Proc. IEEE VLSI Symposium, p.73, Kyoto, Japan (1999).
6. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, in Proc. IEEE VLSI Symposium, p.92, Honolulu, USA (2000).
7. G. Chen, M. F. Li, C. H. Ang, J. Z. Zheng, and D. L. Kwong, IEEE Electron Device Lett., 23, 734 (2002).
8. M. Houssa, M. Aoulaiche, J. L. Autran, C. Parthasarathy, N. Revil, and E. Vincent, J Appl. Phys., 95, 2786 (2004).
9. V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix and E. Vincent, Microelectronics Reliability, 45, 83 (2005).
10. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, N. Revil, in IEDM Tech. Dig, p.109 (2004).
11. M. H. Chang and J. F. Zhang, J.Appl.Phys., in press (2007).
12. D. K. Schroder and J. A. Babcock, J. Appl. Phys., 94, 1 (2003).
13. V. Huard, M. Denais and C. Parthasarathy, Microelectronics Reliability, 46, 1 (2006).
14. J. F. Zhang, C. Z. Zhao, A. H. Chen, G. Groeseneken and R. Degraeve, IEEE Trans. Electron Dev., 51, 1267 (2004).
15. C. Z. Zhao, J. F. Zhang, G. Groeseneken and R. Degraeve, IEEE Trans. Electron Dev., 51, 1274 (2004).
16. C. Z. Zhao and J. F. Zhang, J. Appl. Phys., 97, art. no. 073703 (2005).
17. Y. Tsividis, Operation and modeling of the MOS transistor, p. 146, WCB/McGraw-Hill, New York (1987).