The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neopentasilane

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Chung, K H ^a   Sturm, J C ^a   Sanchez, E ^b   Singh, K K ^b   Kuppurao, S ^b  

^a Princeton University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; X RAY DIFFRACTION;

NEOPENTASILANE; SILICON-CARBON ALLOY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34247276533     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S37     Document Type: Article

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