Low temperature, high growth rate epitaxial silicon and silicon germanium alloy films

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 41-45

  Todd, Michael A ^a   Weeks, Keith D ^a  

^a ASM AMERICA   (United States)

Author keywords

Chemical vapor deposition (CVD); Epitaxy; Si 1 x Ge x; Silicon germanium

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ALLOYS; SILICON WAFERS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MICROGRAPHS; SILICON GERMANIUM; SINGLE WAFER REACTOR SYSTEMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142304544     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.067     Document Type: Conference Paper

References (6)

1. S.S. Onge, M. Dupuis, Semiconductor FABTECH, 12th ed., p. 195.
2. D.C. Ahlgren, Proc. IEDM, 859, 1996.
3. Lodge R. Electron. Eng. (UK). 71(865):1999;18.
4. AMCC 10/11/99 press release, AMCC Introduces the Industry's First 10 Gbps Silicon Germanium OC-192 SONET/SDH Limiting Amplifier, posted in AMCC Home Page.
5. Harame D.L. IEEE Electron. Device Lett. 10(4):1989;156.
6. Doolittle L.R. Nuclear Instr. Methods B. 9:1985;344.