Calculations and applications of the complex band structure for carbon nanotube field-effect transistors

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 4, 2004, Pages

  Xia, T S ^a   Register, L F ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE;

ARTICLE; CALCULATION; DEVICE; NANOTECHNOLOGY; NANOTUBE; SEMICONDUCTOR; STRUCTURE ANALYSIS;

EID: 45849156124     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.045322     Document Type: Article

References (37)

1. S. Iijima, Nature (London) 354, 56 (1991).
2. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
3. D. J. Frank, R. H. Dennard, E. Nowak, P. M. Soloman, Y. Taur, and H.-S. Ph. Wong, Proc. IEEE 89, 259 (2001).
4. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and Ph. Avouris, Appl. Phys. Lett. 80, 3817 (2002).
5. P. Damle, T. Rakshit, M. Paulsson, and S. Datta, IEEE Trans. Nanotechnol. 1, 145 (2002).
6. J. Guo, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 80, 3192 (2002).
7. A. D. Carlo, M. Gheorghe, P. Lugli, M. Sternberg, G. Seifert, and T. Frauenhein, Physica B 314, 86 (2002).
8. F. Léonard and J. Tersoff, Phys. Rev. Lett. 88, 258302 (2002).
9. T.-S. Xia, L. F. Register, and S. K. Banerjee, J. Appl. Phys. 95, 1597 (2004).
10. C. J. White, D. H. Robertson, and J. W. Mintmire, Phys. Rev. B 47, 5485 (1993).
11. D. Srivastava, D. W. Brenner, J. D. Schall, K. D. Ausman, M. Yu, and R. S. Ruoff, J. Phys. Chem. B 103, 4330 (1999).
12. D. Stojkovic, P. Zhang, and V. H. Crespi, Phys. Rev. Lett. 87, 125502 (2001).
13. L. Yang, M. P. Anantram, J. Han, and J. P. Lu, Phys. Rev. B 60, 13 874 (1999).
14. P. Zhang and V. H. Crespi, Phys. Rev. Lett. 89, 056403 (2002).
15. V. Heine, Phys. Rev. 138, A1689 (1965).
16. J. N. Schulman and Y.-C. Chang, Phys. Rev. B 27, 2346 (1983).
17. Y.-C. Chang and J. N. Schulman, Phys. Rev. B 25, 3975 (1982).
18. T. B. Boykin, Phys. Rev. B 54, 7670 (1996).
19. J. K. Tomfohr and O. F. Sankey, Phys. Rev. B 65, 245105 (2002).
20. T.-S. Xia, L. F. Register, and S. K. Banerjee, IEEE Trans. Electron Devices 50, 1511 (2003).
21. D. H. Lee and J. D. Joannopoulos, Phys. Rev. B 23, 4988 (1981).
22. J. N. Schulman and T. C. McGill, Phys. Rev. B 23, 4149 (1981).
23. T. B. Boykin, Phys. Rev. B 54, 8107 (1996).
24. J. A. Stóvneng and P. Lipavský, Phys. Rev. B 49, 16494 (1994).
25. R. C. Bowen, W. R. Frensley, G. Klimeck, and R. Lake, Phys. Rev. B 52, 2754 (1995).
26. D. Z. Y. Ting, E. T. Yu, and T. C. McGill, Phys. Rev. B 45, 3583 (1992).
27. Y. C. Chang, Phys. Rev. B 25, 605 (1982).
28. J. W. Mintmire and C. T. White, Carbon 33, 893 (1995).
29. R. Saito, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 46, 1804 (1992).
30. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1995).
31. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J. Appl. Phys. 81, 7845 (1997).
32. A. A. Odintsov, Phys. Rev. Lett. 85, 150 (2000).
33. K. Natori, J. Appl. Phys. 76, 4879 (1994).
34. H. Yorikawa and S. Muramatsu, Phys. Rev. B 50, 12 203 (1994).
35. H. Yorikawa and S. Muramatsu, Phys. Rev. B 52, 2723 (1995).
36. H. Ajiki and T. Ando, J. Phys. Soc. Jpn. 65, 505 (1996).
37. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. B 61, 2981 (2000).