Unit capacitance distribution of a silicon nitride MIM capacitor in silicon wafer

Semiconductor Science and Technology

Volumn 20, Issue 3, 2005, Pages 330-333

  Zhao, Yi ^a,c   Wan, Xinggong ^b   Xu, Xiangming ^a  

^a Shanghai Hua Hong NEC Electronic Company Limited   (China)

^b Shanghai IC Research and Development Center   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; INTEGRATED CIRCUITS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SILICON WAFERS;

CAPACITANCE DISTRIBUTION; CIRCUIT DENSITY; HIGH-POWER MICROPROCESSOR UNITS (MPU); META-INSULATOR-METAL (MIM) CAPACITORS;

MIM DEVICES;

EID: 14844286425     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/3/014     Document Type: Article

References (4)

1. Ng C H and Chu S-F 2002 Effect of the nitrous oxide plasma treatment on the MIM capacitor IEEE Electron Device Lett. 23 529
2. Van Dover R B 1998 Advanced dielectrics for gate oxide, DRAM and RF capacitors Int. Electron Devices Meeting Technical Digest pp 823
3. Alers G B 1999 Advanced amorphous dielectrics for embedded capacitor Int. Electron Devices Meeting Technical Digest pp 797
4. Maeda M 1999 Dielectric characteristics of a metal-insulator-metal capacitor using plasma-enhanced chemical vapor deposited silicon nitride films J. Vac. Sci. Technol. 17 20