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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 1, 2008, Pages 107-110

Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices

(6) Koyama, M a Inoue, T a Amano, N a Maemoto, T a Sasa, S a Inoue, M a

a OSAKA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

(PL) PROPERTIES; BALLISTIC DEVICES; ELECTRON TRANSPORT (ET); INAS/ALGASB; INTERNATIONAL CONFERENCES; JUNCTION DEVICES; NEGATIVE VOLTAGES; NON-LINEAR CHARACTERISTICS; NONEQUILIBRIUM CARRIER DYNAMICS; NONLINEARITY (INCLUDING BIFURCATION THEORY); OUTPUT VOLTAGES; QUANTUM WIRES; RECTIFICATION EFFECTS; TERMINAL BALLISTIC;

BALLISTICS; CHARGED PARTICLES; CIVIL AVIATION; CRYSTALS; DYNAMICS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON DEVICES; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; EXPLOSIVES; MECHANICS; NONLINEAR PROGRAMMING; PHOTOACOUSTIC EFFECT; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SCANNING; SEMICONDUCTOR MATERIALS; TRANSPORT PROPERTIES;

ELECTRIC RECTIFIERS;

EID: 45749157999 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200776588 Document Type: Conference Paper

Times cited : (4)

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