Adatom-induced variations of the atomic and electronic structures of Si (111) 3×3-Ag: A first-principles study

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 23, 2008, Pages

  Jeong, Hojin ^a   Yeom, Han Woong ^a   Jeong, Sukmin ^b  

^a Yonsei University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 45749125253     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.235425     Document Type: Article

References (38)

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38. The only one discrepancy between the theory and experiment is the existence of E S4 only at the experiment. We think that this E S4 band might be a resonance state of bulk band, rather than surface band, trapped in the forbidden region of Si (111) 1×1.