Electrical conduction through the surface-state band of the Si(111)-√21 × √21-(Ag + Au) structure

Surface Science

Volumn 376, Issue 1-3, 1997, Pages 69-76

  Jiang, Chun Sheng ^a,b   Tong, Xiao ^a   Hasegawa, Shuji ^a   Shozo, Ino ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Angle resolved photoemission spectroscopy; Reflection high energy electron diffraction (RHEED); Silicon; Surface electrical transport; Surface electronic phenomena; Surface structure; X ray photoelectron spectroscopy

Indexed keywords

ELECTRIC RESISTANCE; EMISSION SPECTROSCOPY; FERMI LEVEL; PHOTOEMISSION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE PHENOMENA; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; SURFACE STATE BAND;

SEMICONDUCTING SILICON;

EID: 0031117406     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01569-5     Document Type: Article

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