Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF designs

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 151-154

  Chai, Francis K ^a   Reuter, Ralf ^b   Baker, Thomas ^a   Zupac, Dragan ^a   Kirchgessner, Jim ^a  

^a MOTOROLA INC   (United States)

^b MD: EL741 ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE; CURRENT DENSITY; FREQUENCIES; POWER AMPLIFIERS; SILICON COMPOUNDS;

NOISE MATCHING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0041589263     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Racanelli, et. al., "Ultra High Speed SiGe NPN For Advanced BiCMOS Technology," International Electron Devices Meeting, Technical Digest, pp. 15.3.1-15.3.4, 2001.
2. t, SiGe HBTs - Expanding The Horizons of SiGe BiCMOS," 2002 IEEE International Solid-State Circuits Conference Digest, pp. 180-458, vol. 1, 2002.
3. J. Kirchgessner, et. al., "A 0.18μm SiGe:C RFBiCMOS Technology For Wireless And Gigabit Optical Communication Applications," Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting, pp. 151-154, 2001.
4. J. P. John, et. al., "Optimization of a SiGe:C HBT in a BiCMOS Technology For Low Power Wireless Applications," Proceedings of the 2002 BIPOLAR/BiCMOS Circuits and Technology Meeting, pp. 193-196, 2002.
5. P. Wennekers, A. Ghazinour, R. Reuter, "An Integrated SiGe Transmitter Circuit For 24GHz Radar Sensors," Proceedings of the 2002 BIPOLAR/BiCMOS Circuits and Technology Meeting, pp. 212-215, 2002.