HI-PS technique for MEMS fabrication

Sensors and Actuators, A: Physical

Volumn 115, Issue 2-3 SPEC. ISS., 2004, Pages 608-616

  Dantas, Michel Oliveira Silva ^a   Galeazzo, Elisabete ^a   Peres, Henrique Estanislau Maldonado ^a   Ramirez Fernandez, Franciso Javier ^a   Errachid, Abdelhamid ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b Laboratory of NanoBioEngineering   (Spain)

Author keywords

Hydrogen ion implantation; MEMS; Microelectrodes; Porous silicon; Sacrificial layer; Silicon membranes; Silicon tips

Indexed keywords

ANODIC OXIDATION; CMOS INTEGRATED CIRCUITS; HYDROGEN; ION IMPLANTATION; POROUS SILICON; THERMAL EFFECTS;

HYDROGEN ION IMPLANTATION; SACRIFICIAL LAYER; SILICON MEMBRANES; SILICON TIPS;

MICROELECTROMECHANICAL DEVICES;

EID: 4544376225     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.03.062     Document Type: Conference Paper

References (17)

1. Galeazzo E., Salcedo W.J., Peres H.E.M., Fernandez F.J.R. Porous silicon patterned by hydrogen ion implantation. Sens. Actuators B. 76:2001;343-346.
2. M.O.S. Dantas, E. Galeazzo, H.E.M. Peres, F.J.R. Fernandez, Silicon micromechanical structures fabricated by electrochemical process, in: Proceedings of the First IEEE International Conference on Sensors, IEEE Sensors 2002, Orlando, USA, 2002, 575-579.
3. Dantas M.O.S., Galeazzo E., Peres H.E.M., Fernandez F.J.R. Silicon micromechanical structures fabricated by electrochemical process. IEEE Sens. J. 3(6):2003;722-727.
4. Schechter I., Ben-Chorin M., Kux A. Gas sensing properties of porous silicon. Anal. Chem. 67:1995;3727-3732.
5. Galeazzo E., Peres H.E.M., do Santos G., Peixoto N., Fernandez F.J.R. Gas sensitive porous silicon devices: responses to organic vapors. Sens. Actuators B. 93:2003;384-390.
6. Arrand H.F., et al. Application of porous silicon to optical wavegueding technology. IEEE J. Selected Topics Quantum Electron. 4:1998;975-982.
7. Pavesi L. Will silicon be the photonic material of the third millenium? J. Phys.: Cond. Matter. 15:2003;R1169-R1196.
8. F. Hedrich, S. Billat, W. Lang, Structuring of membrane sensors using sacrificial porous silicon, Sens. Actuators A 84 (2000) 315-323.
9. Krüger R., Arens-Fischer M., Thönissen H., Münder M.G., Berger H., Lüth S., Hilbrich W. Theiss, formation of porous silicon on patterned substrates. Thin Solid Films. 276:1996;257-260.
10. M. Madou, Fundamentals of Microfabrication. CRC Press, 1997, pp. 145-208.
11. H.E.M. Peres, E. Galeazzo, M.O.S. Dantas, F.J. Ramirez-Fernandez, Porous silicon masking by silicon oxide and hydrogen ion implantation, in: Proceeding of the XVI International Conference on Microelectronics and Packaging, SBmicro 2001, Pirenópilis, Goiás, Brazil, 2001, pp. 118-121.
12. W. Gopel, J. Hesse, J.N. Zemel, Sensors, VHC, 1991.
13. Grow R.J., Minne S.C., Manalis S.R., Quate C.F. Silicon nitride cantilevers with oxidation-sharpened silicon tips for atomic force microscopy. J. Microelectromech. Syst. 11(4):2002;317-321.
14. Kim D., Kwon S.J., Lee J.D. Fabrication of silicon field emitters by forming porous silicon. J. Vacuum Sci. Technol. B. 14:1996;1906-1909.
15. M.O. Heuschkel, M. Fejtl, M. Raggenbass, D. Bertrand, P. Renaud, A three-dimensional multi-electrode array for multi-site stimulation and recording in acute brain slices, J. Neurosci. Methods 114 (2002) 135-148.
16. Lehmann V., Rönnebeck S. The physics of macropore formation in low doped p-type silicon. J. Electrochem. Soc. 146:1999;2968-2975.
17. M. Datta, D. Landolt, Fundamental aspects and applications of electrochemical microfabrication, Electrochim. Acta 45 (2000) 2535-2558.